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330M5 N1JP1212 D45F4 HSC119 2N4856 25256XE 3500S RF1510
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  ? ? ? ? guilin strong micro-electronics co.,ltd. gm 1 01 5( ? s1015) features c pnp general purpose transistor maximum ratings t a =25 ~? characteristic ? symbol ? rating ~? unit collector-base voltage ?O - O? v cbo -50 vdc collector-emitter voltage ?O - lO? v ceo -50 vdc emitter-base voltage lO - O? v ebo -5.0 vdc collector current-continuous ?O - Bm ic -150 madc base current O i b -30 madc collector power dissipation ?? p c 225 mw junction temperature Y t j 150 storage temperature ? t stg -55 ? 150 device marking gm1015 ( ? s1015) =ba
? ? ? ? guilin strong micro-electronics co.,ltd. gm 1 01 5( ? s1015) electrical characteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? test condition y?l min ? typ ? max ? unit collector cutoff current ?O? i cbo v cb =-50v, i e =0 -0.1 a emitter cutoff current lO? i ebo v eb =-5v, i c =0 -0.1 a collector-base breakdown voltage ?O - O? v (br)cbo i c =-100 a -50 v collector emitter breakdown voltage ?O - lO? v (br)ceo i c =-1.0ma -50 v emitter-base breakdown voltage lO - O? v (br)ebo i e =-100 a -5 v dc current gain ? h fe v ce =-6v, i c =-2ma 7 0 400 collector-emitter saturation voltage ?O - lO?? v ce(sat) i c =-100ma, i b =-10ma - 0.3 v base -emitter saturation voltage O - lO?? v b e(sat) i c =-100ma, i b =-10ma - 1.0 v base-emitter voltage O - lO? v be v ce =-5.0v, i c =-10ma -0.82 v transition frequency l f t v ce =-5.0v, i c =-10ma 100 18 0 mhz collector output capacitance ? c ob v cb =-10v, i e =0,f=1mhz 4.0 7.0 pf


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